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AS4C4M4F0 Datasheet, Alliance Semiconductor

AS4C4M4F0 dram equivalent, 5v 4m x 4 cmos dram.

AS4C4M4F0 Avg. rating / M : 1.0 rating-11

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AS4C4M4F0 Datasheet

Features and benefits


* Organization: 4,194,304 words × 4 bits
* High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time
* Low power .

Application

These devices feature a high speed page mode operation where read and write operations within a single row (or page) ca.

Description

A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output enable VCC GND Power Ground Selection guide Maximum RAS access time Maximum column address access time Maximum CA.

Image gallery

AS4C4M4F0 Page 1 AS4C4M4F0 Page 2 AS4C4M4F0 Page 3

TAGS

AS4C4M4F0
CMOS
DRAM
AS4C4M4F1
AS4C4M4
AS4C4M4E0
Alliance Semiconductor

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